High Field Breakdown Characteristics of Carbon Nanotube Thin Film Transistors

Man Prakash Gupta, Ashkan Behnam, Feifei Lian, David Estrada, Eric Pop, Satish Kumar

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The high field properties of carbon nanotube (CNT) network thin film transistors (CN-TFTs) are important for their practical operation, and for understanding their reliability. Using a combination of experimental and computational techniques we show how the channel geometry (length L C and width W C ) and network morphology (average CNT length L t and alignment angle distribution θ ) affect heat dissipation and high field breakdown in such devices. The results suggest that when W C L t , the breakdown voltage remains independent of W C but varies linearly with L C . The breakdown power varies almost linearly with both W C and L C when W C L t . We also find that the breakdown power is more susceptible to the variability in the network morphology compared to the breakdown voltage. The analysis offers new insight into the tunable heat dissipation and thermal reliability of CN-TFTs, which can be significantly improved through optimization of the network morphology and device geometry.

Original languageAmerican English
Article number405204
JournalNanotechnology
Volume24
Issue number40
DOIs
StatePublished - 11 Oct 2013

EGS Disciplines

  • Materials Science and Engineering

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