High filling fraction gallium phosphide inverse opals by atomic layer deposition

E. Graugnard; V. Chawla; D. Lorang; C. J. Summers

doi:10.1063/1.2387874

High filling fraction gallium phosphide inverse opals by atomic layer deposition

E. Graugnard, V. Chawla, D. Lorang, C. J. Summers

Micron School of Materials Science and Engineering

Georgia Institute of Technology

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 °C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.

Original language	English
Article number	211102
Journal	Applied Physics Letters
Volume	89
Issue number	21
DOIs	https://doi.org/10.1063/1.2387874
State	Published - 20 Nov 2006

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Mechanical Engineering

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10.1063/1.2387874

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abstract = "High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 °C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.",

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AU - Graugnard, E.

AU - Chawla, V.

AU - Lorang, D.

AU - Summers, C. J.

PY - 2006/11/20

Y1 - 2006/11/20

N2 - High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 °C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.

AB - High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400 to 500 °C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.

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JO - Applied Physics Letters

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ER -

High filling fraction gallium phosphide inverse opals by atomic layer deposition

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