High silicon self-interstitial diffusivity as revealed by lithium ion drifting

W. B. Knowlton; J. T. Walton; Y. K. Wong; I. A. Mason; E. E. Haller

doi:10.1557/proc-469-77

High silicon self-interstitial diffusivity as revealed by lithium ion drifting

W. B. Knowlton, J. T. Walton, Y. K. Wong, I. A. Mason, E. E. Haller

Micron School of Materials Science and Engineering

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the use of lithium ion (Li⁺) drifting as a sensitive means to study Si self-interstitial (Si_I) diffusion. Li⁺ properties in silicon are well known from extensive ion drift studies and Li⁺ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with Si_I injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest Si_I diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl₃ process) at 950 °C for 100 min. Process modeling of this lower bound Si_I diffusion using SUPREM-IV results in a Si_I diffusivity of 3.5×10^-6 cm²/s at 950 °C.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	469
DOIs	https://doi.org/10.1557/proc-469-77
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997

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@article{df2cbf9fc5e3495fab85f44bbe59698d,

title = "High silicon self-interstitial diffusivity as revealed by lithium ion drifting",

abstract = "We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5×10-6 cm2/s at 950 °C.",

author = "Knowlton, {W. B.} and Walton, {J. T.} and Wong, {Y. K.} and Mason, {I. A.} and Haller, {E. E.}",

year = "1997",

doi = "10.1557/proc-469-77",

language = "English",

volume = "469",

pages = "77--82",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - High silicon self-interstitial diffusivity as revealed by lithium ion drifting

AU - Knowlton, W. B.

AU - Walton, J. T.

AU - Wong, Y. K.

AU - Mason, I. A.

AU - Haller, E. E.

PY - 1997

Y1 - 1997

N2 - We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5×10-6 cm2/s at 950 °C.

AB - We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5×10-6 cm2/s at 950 °C.

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U2 - 10.1557/proc-469-77

DO - 10.1557/proc-469-77

M3 - Conference article

AN - SCOPUS:0031378555

SN - 0272-9172

VL - 469

SP - 77

EP - 82

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

High silicon self-interstitial diffusivity as revealed by lithium ion drifting

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