High silicon self-interstitial diffusivity as revealed by lithium ion drifting

W. B. Knowlton; J. T. Walton; Y. K. Wong; I. A. Mason; E. E. Haller

doi:10.1557/proc-469-77

High silicon self-interstitial diffusivity as revealed by lithium ion drifting

W. B. Knowlton
, J. T. Walton
, Y. K. Wong
, I. A. Mason
, E. E. Haller

Micron School of Materials Science and Engineering

University of California at Berkeley

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the use of lithium ion (Li⁺) drifting as a sensitive means to study Si self-interstitial (Si_I) diffusion. Li⁺ properties in silicon are well known from extensive ion drift studies and Li⁺ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with Si_I injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest Si_I diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl₃ process) at 950 °C for 100 min. Process modeling of this lower bound Si_I diffusion using SUPREM-IV results in a Si_I diffusivity of 3.5×10^-6 cm²/s at 950 °C.

Original language	English
Pages (from-to)	77-82
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	469
DOIs	https://doi.org/10.1557/proc-469-77
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997

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@article{df2cbf9fc5e3495fab85f44bbe59698d,

title = "High silicon self-interstitial diffusivity as revealed by lithium ion drifting",

abstract = "We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5{\texttimes}10-6 cm2/s at 950 °C.",

author = "Knowlton, \{W. B.\} and Walton, \{J. T.\} and Wong, \{Y. K.\} and Mason, \{I. A.\} and Haller, \{E. E.\}",

year = "1997",

doi = "10.1557/proc-469-77",

language = "English",

volume = "469",

pages = "77--82",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - High silicon self-interstitial diffusivity as revealed by lithium ion drifting

AU - Knowlton, W. B.

AU - Walton, J. T.

AU - Wong, Y. K.

AU - Mason, I. A.

AU - Haller, E. E.

PY - 1997

Y1 - 1997

N2 - We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5×10-6 cm2/s at 950 °C.

AB - We report on the use of lithium ion (Li+) drifting as a sensitive means to study Si self-interstitial (SiI) diffusion. Li+ properties in silicon are well known from extensive ion drift studies and Li+ interactions with dopants and point defects. We have used this low temperature (approximately 100 °C) technique in combination with SiI injection from oxides to delineate, identify and eliminate D defects in certain p-type floating zone (FZ) Si single crystals. Our results suggest SiI diffusion occurs to a depth of at least 10 mm into the bulk during phosphorus (P) diffusion with oxidation (i.e., POCl3 process) at 950 °C for 100 min. Process modeling of this lower bound SiI diffusion using SUPREM-IV results in a SiI diffusivity of 3.5×10-6 cm2/s at 950 °C.

UR - https://www.scopus.com/pages/publications/0031378555

U2 - 10.1557/proc-469-77

DO - 10.1557/proc-469-77

M3 - Conference article

AN - SCOPUS:0031378555

SN - 0272-9172

VL - 469

SP - 77

EP - 82

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

High silicon self-interstitial diffusivity as revealed by lithium ion drifting

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