Implantation of carbon in GaAs and compensating native defects

Amy J. Moll; Joel W. Ager; Man Yu Kin; Wladek Walukiewicz; Eugene E. Haller

Implantation of carbon in GaAs and compensating native defects

Amy J. Moll, Joel W. Ager, Man Yu Kin, Wladek Walukiewicz, Eugene E. Haller

Lawrence Berkeley Natl. Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the C_As acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.

Original language	English
Pages (from-to)	1535-1540
Number of pages	6
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 3
State	Published - 1994
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993

Cite this

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title = "Implantation of carbon in GaAs and compensating native defects",

abstract = "The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the CAs acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.",

author = "Moll, {Amy J.} and Ager, {Joel W.} and Kin, {Man Yu} and Wladek Walukiewicz and Haller, {Eugene E.}",

year = "1994",

language = "English",

volume = "143-4",

pages = "1535--1540",

number = "pt 3",

note = "Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) ; Conference date: 18-07-1993 Through 23-07-1993",

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TY - JOUR

T1 - Implantation of carbon in GaAs and compensating native defects

AU - Moll, Amy J.

AU - Ager, Joel W.

AU - Kin, Man Yu

AU - Walukiewicz, Wladek

AU - Haller, Eugene E.

PY - 1994

Y1 - 1994

N2 - The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the CAs acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.

AB - The effects of co-implantation on the electrical activity of C acceptors have been studied using a series of elements as co-implants. A variety of electrical and structural techniques were used for characterization. It is found that although co-implantation with heavy ions improves the substitutionality of C atoms on As sites, a high electrical activity of the CAs acceptors is attained only if the stoichiometry is maintained through co-implantation of group III atoms.

UR - http://www.scopus.com/inward/record.url?scp=0028582303&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028582303

SN - 0255-5476

VL - 143-4

SP - 1535

EP - 1540

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 3

T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Implantation of carbon in GaAs and compensating native defects

Abstract

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