@inproceedings{8c22c2b7ea0c4897af5ba01a55c3ca50,
title = "Infrared imaging of heat dissipation in graphene transistors",
abstract = "We use infrared microscopy to image the temperature profile of graphene field-effect transistors functioning at high bias. We find a peak in the temperature profile, i.e. a {"}hot spot{"} appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. The hot spot position shifts on the graphene sheet by tuning the gate voltage into an ambipolar transport regime. This shows a direct demonstration and manipulation of Joule heating in graphene transistors. Comparison with a comprehensive electrical-thermal model leads to additional insight into graphene transport and energy dissipation physics.",
author = "Bae, {Myung Ho} and Ong, {Zhun Yong} and David Estrada and Eric Pop",
year = "2010",
doi = "10.1149/1.3367936",
language = "English",
isbn = "9781566777957",
series = "ECS Transactions",
number = "5",
pages = "51--62",
booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2",
edition = "5",
}