Infrared imaging of heat dissipation in graphene transistors

Myung Ho Bae, Zhun Yong Ong, David Estrada, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We use infrared microscopy to image the temperature profile of graphene field-effect transistors functioning at high bias. We find a peak in the temperature profile, i.e. a "hot spot" appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. The hot spot position shifts on the graphene sheet by tuning the gate voltage into an ambipolar transport regime. This shows a direct demonstration and manipulation of Joule heating in graphene transistors. Comparison with a comprehensive electrical-thermal model leads to additional insight into graphene transport and energy dissipation physics.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2
Pages51-62
Number of pages12
Edition5
ISBN (Electronic)9781607681458
DOIs
StatePublished - 2010

Publication series

NameECS Transactions
Number5
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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