Infrared microscopy of joule heating in graphene field effect transistors

Myung Ho Bae, Zhun Yong Ong, David Estrada, Eric Pop

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We use infrared microscopy to image the temperature profile of graphene field-effect transistors operating at constant source to drain current bias. We find a peak in the temperature profile, i.e. a "hot spot" appears near the drain (anode) electrode of the graphene sheet at high current while operating in the hole-doped regime. We shift the hot spot position on the graphene sheet by tuning the gate voltage into an ambipolar transport regime. This shows a direct demonstration and manipulation of Joule heating in graphene transistors.

Original languageEnglish
Title of host publication2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Pages818-821
Number of pages4
StatePublished - 2009
Event2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 - Genoa, Italy
Duration: 26 Jul 200930 Jul 2009

Publication series

Name2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Conference

Conference2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009
Country/TerritoryItaly
CityGenoa
Period26/07/0930/07/09

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