Integrating carbon-based nanoelectronics with chalcogenide phase change memory

Feng Xiong; Albert Liao; Myung Ho Bae; David Estrada; Eric Pop

doi:10.1109/EDSSC.2010.5713779

Integrating carbon-based nanoelectronics with chalcogenide phase change memory

Feng Xiong, Albert Liao, Myung Ho Bae, David Estrada, Eric Pop

Micron School of Materials Science and Engineering

University of Illinois at Urbana-Champaign

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Phase change memory (PCM) is a promising candidate for next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) and graphene as interconnects to induce phase change in ultra small regions (∼20 nm) of Ge₂Sb ₂Te₅ (GST), we are able to build ultra-low power PCM devices. Normal memory operations are demonstrated with exceptionally low current (< 5 μA) and power consumption, nearly two orders of magnitude lower than state-of-the-art. Electrical characterization shows that switching voltages in PCM with both CNT and graphene electrodes are scalable to sub-1 V. Our experiments also pave the way to carbon nanoelectronics with integrated PCM data storage.

Original language	English
Title of host publication	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
DOIs	https://doi.org/10.1109/EDSSC.2010.5713779
State	Published - 2010
Event	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 - Hong Kong, China Duration: 15 Dec 2010 → 17 Dec 2010

Publication series

Name	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Conference

Conference	2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Country/Territory	China
City	Hong Kong
Period	15/12/10 → 17/12/10

Keywords

Carbon nano-tube
Chalcogenide
Graphene
GST
Phase change memory

Access to Document

10.1109/EDSSC.2010.5713779

Cite this

Xiong, F., Liao, A., Bae, M. H., Estrada, D., & Pop, E. (2010). Integrating carbon-based nanoelectronics with chalcogenide phase change memory. In 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 Article 5713779 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010). https://doi.org/10.1109/EDSSC.2010.5713779

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title = "Integrating carbon-based nanoelectronics with chalcogenide phase change memory",

abstract = "Phase change memory (PCM) is a promising candidate for next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) and graphene as interconnects to induce phase change in ultra small regions (∼20 nm) of Ge2Sb 2Te5 (GST), we are able to build ultra-low power PCM devices. Normal memory operations are demonstrated with exceptionally low current (< 5 μA) and power consumption, nearly two orders of magnitude lower than state-of-the-art. Electrical characterization shows that switching voltages in PCM with both CNT and graphene electrodes are scalable to sub-1 V. Our experiments also pave the way to carbon nanoelectronics with integrated PCM data storage.",

keywords = "Carbon nano-tube, Chalcogenide, Graphene, GST, Phase change memory",

author = "Feng Xiong and Albert Liao and Bae, {Myung Ho} and David Estrada and Eric Pop",

year = "2010",

doi = "10.1109/EDSSC.2010.5713779",

language = "English",

isbn = "9781424499977",

series = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

booktitle = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010",

note = "2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010 ; Conference date: 15-12-2010 Through 17-12-2010",

}

Xiong, F, Liao, A, Bae, MH, Estrada, D & Pop, E 2010, Integrating carbon-based nanoelectronics with chalcogenide phase change memory. in 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010., 5713779, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, Hong Kong, China, 15/12/10. https://doi.org/10.1109/EDSSC.2010.5713779

Integrating carbon-based nanoelectronics with chalcogenide phase change memory. / Xiong, Feng; Liao, Albert; Bae, Myung Ho et al.
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010. 2010. 5713779 (2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Integrating carbon-based nanoelectronics with chalcogenide phase change memory

AU - Xiong, Feng

AU - Liao, Albert

AU - Bae, Myung Ho

AU - Estrada, David

AU - Pop, Eric

PY - 2010

Y1 - 2010

N2 - Phase change memory (PCM) is a promising candidate for next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) and graphene as interconnects to induce phase change in ultra small regions (∼20 nm) of Ge2Sb 2Te5 (GST), we are able to build ultra-low power PCM devices. Normal memory operations are demonstrated with exceptionally low current (< 5 μA) and power consumption, nearly two orders of magnitude lower than state-of-the-art. Electrical characterization shows that switching voltages in PCM with both CNT and graphene electrodes are scalable to sub-1 V. Our experiments also pave the way to carbon nanoelectronics with integrated PCM data storage.

AB - Phase change memory (PCM) is a promising candidate for next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) and graphene as interconnects to induce phase change in ultra small regions (∼20 nm) of Ge2Sb 2Te5 (GST), we are able to build ultra-low power PCM devices. Normal memory operations are demonstrated with exceptionally low current (< 5 μA) and power consumption, nearly two orders of magnitude lower than state-of-the-art. Electrical characterization shows that switching voltages in PCM with both CNT and graphene electrodes are scalable to sub-1 V. Our experiments also pave the way to carbon nanoelectronics with integrated PCM data storage.

KW - Carbon nano-tube

KW - Chalcogenide

KW - Graphene

KW - GST

KW - Phase change memory

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M3 - Conference contribution

AN - SCOPUS:79952511852

SN - 9781424499977

T3 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

BT - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

T2 - 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010

Y2 - 15 December 2010 through 17 December 2010

ER -

Integrating carbon-based nanoelectronics with chalcogenide phase change memory

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