Interface phonons in InAs and AlAs quantum dot structures

A. G. Milekhin; A. I. Toropov; A. K. Bakarov; D. A. Tenne; G. Zanelatto; J. C. Galzerani; S. Schulze; D. R.T. Zahn

doi:10.1103/PhysRevB.70.085314

Interface phonons in InAs and AlAs quantum dot structures

A. G. Milekhin, A. I. Toropov, A. K. Bakarov, D. A. Tenne, G. Zanelatto, J. C. Galzerani, S. Schulze, D. R.T. Zahn

Physics Department

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We present an experimental study of InAs/AlAs(GaAs) periodical structures with InAs and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. The interface phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model. A good agreement is obtained, especially if the preferential shape of the quantum, dots determined from transmission electron microscopy is taken into account.

Original language	English
Article number	085314
Pages (from-to)	085314-1-085314-5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.70.085314
State	Published - Aug 2004

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title = "Interface phonons in InAs and AlAs quantum dot structures",

abstract = "We present an experimental study of InAs/AlAs(GaAs) periodical structures with InAs and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. The interface phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model. A good agreement is obtained, especially if the preferential shape of the quantum, dots determined from transmission electron microscopy is taken into account.",

author = "Milekhin, {A. G.} and Toropov, {A. I.} and Bakarov, {A. K.} and Tenne, {D. A.} and G. Zanelatto and Galzerani, {J. C.} and S. Schulze and Zahn, {D. R.T.}",

year = "2004",

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T1 - Interface phonons in InAs and AlAs quantum dot structures

AU - Milekhin, A. G.

AU - Toropov, A. I.

AU - Bakarov, A. K.

AU - Tenne, D. A.

AU - Zanelatto, G.

AU - Galzerani, J. C.

AU - Schulze, S.

AU - Zahn, D. R.T.

PY - 2004/8

Y1 - 2004/8

N2 - We present an experimental study of InAs/AlAs(GaAs) periodical structures with InAs and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. The interface phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model. A good agreement is obtained, especially if the preferential shape of the quantum, dots determined from transmission electron microscopy is taken into account.

AB - We present an experimental study of InAs/AlAs(GaAs) periodical structures with InAs and AlAs quantum dots by means of Raman spectroscopy. Experiments on the asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. The interface phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model. A good agreement is obtained, especially if the preferential shape of the quantum, dots determined from transmission electron microscopy is taken into account.

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U2 - 10.1103/PhysRevB.70.085314

DO - 10.1103/PhysRevB.70.085314

M3 - Article

AN - SCOPUS:19544389471

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VL - 70

SP - 085314-1-085314-5

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

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ER -

Interface phonons in InAs and AlAs quantum dot structures

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