Interface phonons of quantum dots in InAs/(Al,Ga)As heteroepitaxial system: A Raman study

D. A. Tenne, A. G. Milekhin, A. K. Bakarov, A. I. Toropov, G. Zanelatto, J. C. Galzerani, S. Schulze, D. R.T. Zahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Periodical structures with InAs quantum dots in an (Al,Ga)As matrix and AlAs dots embedded in InAs were studied by Raman spectroscopy focusing on the interface phonons. Experiments on asymmetric GaAs/InAs/AlAs quantum dot structures allowed distinguishing between the phonons of corrugated dot/matrix interfaces and those of planar wetting layer/matrix interfaces. The observed positions of the interface phonons are compared with the dielectric continuum model calculations taking into account the preferential dot shape derived from transmission electron microscopy.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages693-694
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint

Dive into the research topics of 'Interface phonons of quantum dots in InAs/(Al,Ga)As heteroepitaxial system: A Raman study'. Together they form a unique fingerprint.

Cite this