Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance

M. R. Latif; T. L. Nichol; M. Mitkova; D. A. Tenne; I. Csarnovics; S. Kokenyesi; A. Csik

doi:10.1109/WMED.2014.6818720

Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance

M. R. Latif, T. L. Nichol, M. Mitkova, D. A. Tenne, I. Csarnovics, S. Kokenyesi, A. Csik

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Original language	American English
Journal	2014 IEEE Workshop On Microelectronics And Electron Devices (WMED)
DOIs	https://doi.org/10.1109/WMED.2014.6818720
State	Published - 18 Apr 2014

Keywords

Redox conductive bridge memory
chalcogenide glass
film and device characterization

EGS Disciplines

Electrical and Computer Engineering

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Ion Beam Effect on Ge-Se Chalcogenide Glass Films Non-Volatile MFinal published version, 590 KBLicense: Unspecified
Ion Beam Effect on Ge-Se Chalcogenide Glass Films Non-Volatile MFinal published version, 590 KBLicense: Unspecified

Cite this

@article{8de2d6a7777c4c86a8d6c6da67f21a0a,

title = "Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance",

keywords = "Redox conductive bridge memory, chalcogenide glass, film and device characterization",

author = "Latif, {M. R.} and Nichol, {T. L.} and M. Mitkova and Tenne, {D. A.} and I. Csarnovics and S. Kokenyesi and A. Csik",

year = "2014",

month = apr,

day = "18",

doi = "10.1109/WMED.2014.6818720",

language = "American English",

}

TY - JOUR

T1 - Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance

AU - Latif, M. R.

AU - Nichol, T. L.

AU - Mitkova, M.

AU - Tenne, D. A.

AU - Csarnovics, I.

AU - Kokenyesi, S.

AU - Csik, A.

PY - 2014/4/18

Y1 - 2014/4/18

KW - Redox conductive bridge memory

KW - chalcogenide glass

KW - film and device characterization

UR - https://scholarworks.boisestate.edu/electrical_facpubs/262

U2 - 10.1109/WMED.2014.6818720

DO - 10.1109/WMED.2014.6818720

M3 - Article

JO - 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED)

JF - 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED)

ER -

Ion Beam Effect on Ge-Se Chalcogenide Glass Films: Non-Volatile Memory Array Formation, Structural Changes and Device Performance

Keywords

EGS Disciplines

Access to Document

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