Abstract
Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.
Original language | English |
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Pages (from-to) | 775-777 |
Number of pages | 3 |
Journal | Technical Physics Letters |
Volume | 25 |
Issue number | 10 |
DOIs | |
State | Published - Oct 1999 |