Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

V. A. Gaǐsler, A. I. Toropov, A. K. Bakarov, A. K. Kalagin, N. T. Moshegov, D. A. Ténné, M. M. Kachanova, O. R. Kopp, L. A. Nenasheva, A. S. Medvedev

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.

Original languageEnglish
Pages (from-to)775-777
Number of pages3
JournalTechnical Physics Letters
Volume25
Issue number10
DOIs
StatePublished - Oct 1999

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