Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

V. A. Gaǐsler; A. I. Toropov; A. K. Bakarov; A. K. Kalagin; N. T. Moshegov; D. A. Ténné; M. M. Kachanova; O. R. Kopp; L. A. Nenasheva; A. S. Medvedev

doi:10.1134/1.1262631

Lasing characteristics of lasers with a vertical cavity based on In_0.2Ga_0.8As quantum wells

V. A. Gaǐsler
, A. I. Toropov
, A. K. Bakarov
, A. K. Kalagin
, N. T. Moshegov
, D. A. Ténné
, M. M. Kachanova
, O. R. Kopp
, L. A. Nenasheva
, A. S. Medvedev

Physics Department

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.

Original language	English
Pages (from-to)	775-777
Number of pages	3
Journal	Technical Physics Letters
Volume	25
Issue number	10
DOIs	https://doi.org/10.1134/1.1262631
State	Published - Oct 1999

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title = "Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells",

abstract = "Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.",

author = "Gaǐsler, \{V. A.\} and Toropov, \{A. I.\} and Bakarov, \{A. K.\} and Kalagin, \{A. K.\} and Moshegov, \{N. T.\} and T{\'e}nn{\'e}, \{D. A.\} and Kachanova, \{M. M.\} and Kopp, \{O. R.\} and Nenasheva, \{L. A.\} and Medvedev, \{A. S.\}",

year = "1999",

month = oct,

doi = "10.1134/1.1262631",

language = "English",

volume = "25",

pages = "775--777",

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TY - JOUR

T1 - Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

AU - Gaǐsler, V. A.

AU - Toropov, A. I.

AU - Bakarov, A. K.

AU - Kalagin, A. K.

AU - Moshegov, N. T.

AU - Ténné, D. A.

AU - Kachanova, M. M.

AU - Kopp, O. R.

AU - Nenasheva, L. A.

AU - Medvedev, A. S.

PY - 1999/10

Y1 - 1999/10

N2 - Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.

AB - Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T= 250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime.

UR - https://www.scopus.com/pages/publications/0033244950

U2 - 10.1134/1.1262631

DO - 10.1134/1.1262631

M3 - Article

AN - SCOPUS:0033244950

SN - 1063-7850

VL - 25

SP - 775

EP - 777

JO - Technical Physics Letters

JF - Technical Physics Letters

IS - 10

ER -

Lasing characteristics of lasers with a vertical cavity based on In_0.2Ga_0.8As quantum wells

Abstract

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