@inproceedings{a6f74a079b2a436eaa48285db3239c0b,
title = "Leakage Current Recovery in SRAM After AC Stressing",
abstract = "A recovery of sub-threshold current, measured as standby current has been seen on static random access memory (SRAM) devices after AC stress. A theoretical model is presented to explain the observed data in this paper. A trapped charge model is proposed for decrease in subthreshold current leading to lower observed standby current on continuous negative unipolar write stress. Several mechanisms have been proposed earlier such as Poole-Frenkel enhanced emission from traps, trap assisted tunneling, and band-to-band tunneling to explain possible source of off current.",
keywords = "CMOS process, CMOS technology, Current measurement, Electron traps, Leakage current, Random access memory, Stress, Variable structure systems, Voltage, Writing",
author = "C. Payan and S. Kumar and A. Thupil and S. Kasichainula and Knowlton, \{W. B.\}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Integrated Reliability Workshop, IRW 2003 ; Conference date: 20-10-2003 Through 23-10-2003",
year = "2003",
doi = "10.1109/IRWS.2003.1283303",
language = "American English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "67--70",
booktitle = "2003 IEEE International Integrated Reliability Workshop Final Report",
address = "United States",
}