Learning Behavior of Memristor-Based Neuromorphic Circuits in the Presence of Radiation

In this paper, a feed-forward spiking neural network with memristive synapses is designed to learn a spatio-temporal pattern representing the 25-pixel character ‘B’ by separating correlated and uncorrelated afferents. The network uses spike-timing-dependent plasticity (STDP) learning behavior, which is implemented using biphasic neuron spikes. A TiO ₂ memristor non-linear drift model is used to simulate synaptic behavior in the neuromorphic circuit. The network uses a many-to-one topology with 25 pre-synaptic neurons (afferent) each connected to a memristive synapse and one post-synaptic neuron. The memristor model is modified to include the experimentally observed effect of state-altering radiation. During the learning process, irradiation of the memristors alters their conductance state, and the effect on circuit learning behavior is determined. Radiation is observed to generally increase the synaptic weight of the memristive devices, making the network connections more conductive and less stable. However, the network appears to relearn the pattern when radiation ceases but does take longer to resolve the correlation and pattern. Network recovery time is proportional to flux, intensity, and duration of the radiation. Further, at lower but continuous radiation exposure, (flux 1x10 ¹⁰ cm ⁻² s ⁻¹ and below), the circuit resolves the pattern successfully for up to 100 s.