Abstract
The tapping-mode operation of the atomic force microscope (AFM) with an electrostatic force modulation was characterized by analyzing amplitude versus distance and amplitude versus frequency curves. This technique was applied to the modification of silicon surfaces on the nanometer scale and imaging the modified surface for the first time. Lines of different width and height were formed on a hydrogen-passivated Si surface by the oxidation process caused by a bias voltage between tip and sample. The pattern etched in aqueous KOH solution (1mol/η) at 60 °C showed a good pattern transfer. A distortion of the pattern was observed when the writing direction was changed. A minimum line width of about 10 nm was obtained, which is close to that achieved by a contact-mode AFM.
Original language | English |
---|---|
Pages (from-to) | S95-S98 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 66 |
Issue number | SUPPL. 1 |
DOIs | |
State | Published - 1998 |