Long Term Stability Study of Planar, Two-Terminal Field Emitters

Ranajoy Bhattacharya; Marco Turchetti; P. Donald Keithley; Karl K. Berggren; Jim Browning

Long Term Stability Study of Planar, Two-Terminal Field Emitters

Ranajoy Bhattacharya, Marco Turchetti, P. Donald Keithley, Karl K. Berggren, Jim Browning

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Two different types of planar nano-scale (4–5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed, and long-term stability tests were conducted in a dedicated life-time test chamber under high vacuum environment (~5×10 ⁻⁸ Torr). Experiments showed that the maximum field emission current was ≈ 3 nA from bowtie devices for a bias voltage of 6 V and ≈ 15 nA from diode devices at a bias voltage of 8 V. A long-term stability study showed that although one diode device failed at ≈ 300 hr, three other devices emitted a stable current (< 5 % Drop) for > 1000 hrs. of continuous operation at a DC bias of 6 V.

Original language	American English
Title of host publication	2021 22nd International Vacuum Electronics Conference (IVEC)
State	Published - 1 Jan 2021

Keywords

field emission characterization
long term stability characterization
planar field emitters

EGS Disciplines

Electrical and Computer Engineering

Access to Document

https://doi.org/10.1109/IVEC51707.2021.9722417

Cite this

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title = "Long Term Stability Study of Planar, Two-Terminal Field Emitters",

abstract = " Two different types of planar nano-scale (4–5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed, and long-term stability tests were conducted in a dedicated life-time test chamber under high vacuum environment (~5×10 −8 Torr). Experiments showed that the maximum field emission current was ≈ 3 nA from bowtie devices for a bias voltage of 6 V and ≈ 15 nA from diode devices at a bias voltage of 8 V. A long-term stability study showed that although one diode device failed at ≈ 300 hr, three other devices emitted a stable current (< 5 % Drop) for > 1000 hrs. of continuous operation at a DC bias of 6 V.",

keywords = "field emission characterization, long term stability characterization, planar field emitters",

author = "Ranajoy Bhattacharya and Marco Turchetti and Keithley, {P. Donald} and Berggren, {Karl K.} and Jim Browning",

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language = "American English",

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TY - CHAP

T1 - Long Term Stability Study of Planar, Two-Terminal Field Emitters

AU - Bhattacharya, Ranajoy

AU - Turchetti, Marco

AU - Keithley, P. Donald

AU - Berggren, Karl K.

AU - Browning, Jim

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Two different types of planar nano-scale (4–5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed, and long-term stability tests were conducted in a dedicated life-time test chamber under high vacuum environment (~5×10 −8 Torr). Experiments showed that the maximum field emission current was ≈ 3 nA from bowtie devices for a bias voltage of 6 V and ≈ 15 nA from diode devices at a bias voltage of 8 V. A long-term stability study showed that although one diode device failed at ≈ 300 hr, three other devices emitted a stable current (< 5 % Drop) for > 1000 hrs. of continuous operation at a DC bias of 6 V.

AB - Two different types of planar nano-scale (4–5 nm) field emitters, bowtie and diode devices, were characterized for use as electron sources for vacuum nano-transistors. I-V measurements were performed, and long-term stability tests were conducted in a dedicated life-time test chamber under high vacuum environment (~5×10 −8 Torr). Experiments showed that the maximum field emission current was ≈ 3 nA from bowtie devices for a bias voltage of 6 V and ≈ 15 nA from diode devices at a bias voltage of 8 V. A long-term stability study showed that although one diode device failed at ≈ 300 hr, three other devices emitted a stable current (< 5 % Drop) for > 1000 hrs. of continuous operation at a DC bias of 6 V.

KW - field emission characterization

KW - long term stability characterization

KW - planar field emitters

UR - https://scholarworks.boisestate.edu/electrical_facpubs/531

UR - https://doi.org/10.1109/IVEC51707.2021.9722417

M3 - Chapter

BT - 2021 22nd International Vacuum Electronics Conference (IVEC)

ER -

Long Term Stability Study of Planar, Two-Terminal Field Emitters

Abstract

Keywords

EGS Disciplines

Access to Document

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