Low Frequency Oscillator Circuit Using Si-Gated Field Emitter Arrays

Ranajoy Bhattacharya, Robert Hay, Mason Cannon, Girish Rughoobur, Nedeljko Karaulac, Akintunde I. Akinwande, Jim Browning

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Si-gated field emitter arrays (Si-GFEAs) are strong candidates for nano vacuum channel transistors (NVCTs). In this work, Si-GFEA die with 1000 X1000 arrays were used to create a Colpitts oscillator circuit. First, transfer and output characteristics sweeps were carried and based on those data, a LTSpice vacuum transistor (VT) model was developed. Then the model was used to develop a Colpitts oscillator circuit. The circuit was experimentally tested where the collector voltage was kept at 200 V DC and the gate voltage was kept at 50V DC. From the experiment, an oscillation frequency of 152 kHz was observed with a maximum amplitude of of Vpp=4.38 V.

Original languageEnglish
Title of host publication2022 23rd International Vacuum Electronics Conference, IVEC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages230-231
Number of pages2
ISBN (Electronic)9781665443258
DOIs
StatePublished - 2022
Event23rd International Vacuum Electronics Conference, IVEC 2022 - Monterey, United States
Duration: 25 Apr 202229 Apr 2022

Publication series

Name2022 23rd International Vacuum Electronics Conference, IVEC 2022

Conference

Conference23rd International Vacuum Electronics Conference, IVEC 2022
Country/TerritoryUnited States
CityMonterey
Period25/04/2229/04/22

Keywords

  • Experimental observation
  • LTSpice simulation
  • Oscillator circuit
  • Si-gated field emitters

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