Measurement of end-hat effects in a crossed-field amplifier

J. Browning; Chung Chan; J. Ye; R. Macgregor; T. E. Ruden

doi:10.1109/IEDM.1992.307468

Measurement of end-hat effects in a crossed-field amplifier

J. Browning, Chung Chan, J. Ye, R. Macgregor, T. E. Ruden

Electrical Engineering Department

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.

Original language	English
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	755-758
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307468
State	Published - 1992
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: 13 Dec 1992 → 16 Dec 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	13/12/92 → 16/12/92

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10.1109/IEDM.1992.307468

Cite this

Browning, J., Chan, C., Ye, J., Macgregor, R., & Ruden, T. E. (1992). Measurement of end-hat effects in a crossed-field amplifier. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 755-758). Article 307468 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307468

@inproceedings{aabf6944d10b40f4be33e1d282b1edf2,

title = "Measurement of end-hat effects in a crossed-field amplifier",

abstract = "A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40\%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.",

author = "J. Browning and Chung Chan and J. Ye and R. Macgregor and Ruden, \{T. E.\}",

note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",

year = "1992",

doi = "10.1109/IEDM.1992.307468",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "755--758",

booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",

address = "United States",

}

Browning, J, Chan, C, Ye, J, Macgregor, R & Ruden, TE 1992, Measurement of end-hat effects in a crossed-field amplifier. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307468, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 755-758, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 13/12/92. https://doi.org/10.1109/IEDM.1992.307468

Measurement of end-hat effects in a crossed-field amplifier. / Browning, J.; Chan, Chung; Ye, J. et al.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 755-758 307468 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measurement of end-hat effects in a crossed-field amplifier

AU - Browning, J.

AU - Chan, Chung

AU - Ye, J.

AU - Macgregor, R.

AU - Ruden, T. E.

PY - 1992

Y1 - 1992

N2 - A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.

AB - A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.

UR - https://www.scopus.com/pages/publications/84944986137

U2 - 10.1109/IEDM.1992.307468

DO - 10.1109/IEDM.1992.307468

M3 - Conference contribution

AN - SCOPUS:84944986137

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 755

EP - 758

BT - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992

Y2 - 13 December 1992 through 16 December 1992

ER -

Measurement of end-hat effects in a crossed-field amplifier

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