Mechanism of recombination in InAs quantum dots in indirect bandgap AlGaAs matrices

T. S. Shamirzaev, A. M. Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, S. Schulze, C. Von Borczyskowski, D. R.T. Zahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoluminescence kinetics in InAs quantum dots in indirect-gap AlGaAs matrixes has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account exchange splitting of excitonic levels in the quantum dots and the deviation of its shape from spheroid.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages629-630
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

Fingerprint

Dive into the research topics of 'Mechanism of recombination in InAs quantum dots in indirect bandgap AlGaAs matrices'. Together they form a unique fingerprint.

Cite this