Abstract
The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential photoluminescence decay is observed in the temperature range of 4.2-50 K. At higher temperatures, the decay time decreases to a few nanoseconds. The experimental results are interpreted using a model of singlet-triplet splitting of exciton levels in small dots in a dense quantum dot system with local carrier transfer between dots.
| Original language | English |
|---|---|
| Pages (from-to) | 282-285 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 20 |
| Issue number | 3-4 |
| DOIs | |
| State | Published - Jan 2004 |
| Event | Proceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States Duration: 16 Jun 2003 → 20 Jun 2003 |
Keywords
- Excitons
- Photoluminescence
- Self-assembled quantum dots
- Singlet-triplet splitting