Millisecond fluorescence in InAs quantum dots embedded in AlAs

  • T. S. Shamirzaev
  • , A. M. Gilinsky
  • , A. I. Toropov
  • , A. K. Bakarov
  • , D. A. Tenne
  • , K. S. Zhuravlev
  • , C. Von Borczyskowski
  • , D. R.T. Zahn

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations

Abstract

The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential photoluminescence decay is observed in the temperature range of 4.2-50 K. At higher temperatures, the decay time decreases to a few nanoseconds. The experimental results are interpreted using a model of singlet-triplet splitting of exciton levels in small dots in a dense quantum dot system with local carrier transfer between dots.

Original languageEnglish
Pages (from-to)282-285
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume20
Issue number3-4
DOIs
StatePublished - Jan 2004
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: 16 Jun 200320 Jun 2003

Keywords

  • Excitons
  • Photoluminescence
  • Self-assembled quantum dots
  • Singlet-triplet splitting

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