Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

T. S. Shamirzaev; A. M. Gilinsky; A. K. Bakarov; A. I. Toropov; D. A. Ténné; K. S. Zhuravlev; C. Von Borczyskowski; D. R.T. Zahn

doi:10.1134/1.1581967

Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

T. S. Shamirzaev
, A. M. Gilinsky
, A. K. Bakarov
, A. I. Toropov
, D. A. Ténné
, K. S. Zhuravlev
, C. Von Borczyskowski
, D. R.T. Zahn

Physics Department

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Chemnitz University of Technology

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Anomalously long millisecond kinetics of photoluminescence (PL) is observed at low temperatures (4.2-50 K) in direct-bandgap InAs quantum dots formed in an AlAs matrix. An increase in temperature leads to a decrease in the duration of PL decay down to several nanoseconds at 300 K, whereas the integral PL intensity remains constant up to 210 K. In order to explain the experimental results, a model is proposed that takes into account the singlet-triplet splitting of exciton levels in small quantum dots.

Original language	English
Pages (from-to)	389-392
Number of pages	4
Journal	JETP Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1134/1.1581967
State	Published - 2003

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10.1134/1.1581967

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title = "Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix",

abstract = "Anomalously long millisecond kinetics of photoluminescence (PL) is observed at low temperatures (4.2-50 K) in direct-bandgap InAs quantum dots formed in an AlAs matrix. An increase in temperature leads to a decrease in the duration of PL decay down to several nanoseconds at 300 K, whereas the integral PL intensity remains constant up to 210 K. In order to explain the experimental results, a model is proposed that takes into account the singlet-triplet splitting of exciton levels in small quantum dots.",

author = "Shamirzaev, \{T. S.\} and Gilinsky, \{A. M.\} and Bakarov, \{A. K.\} and Toropov, \{A. I.\} and T{\'e}nn{\'e}, \{D. A.\} and Zhuravlev, \{K. S.\} and \{Von Borczyskowski\}, C. and Zahn, \{D. R.T.\}",

year = "2003",

doi = "10.1134/1.1581967",

language = "English",

volume = "77",

pages = "389--392",

number = "7",

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TY - JOUR

T1 - Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

AU - Shamirzaev, T. S.

AU - Gilinsky, A. M.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Ténné, D. A.

AU - Zhuravlev, K. S.

AU - Von Borczyskowski, C.

AU - Zahn, D. R.T.

PY - 2003

Y1 - 2003

N2 - Anomalously long millisecond kinetics of photoluminescence (PL) is observed at low temperatures (4.2-50 K) in direct-bandgap InAs quantum dots formed in an AlAs matrix. An increase in temperature leads to a decrease in the duration of PL decay down to several nanoseconds at 300 K, whereas the integral PL intensity remains constant up to 210 K. In order to explain the experimental results, a model is proposed that takes into account the singlet-triplet splitting of exciton levels in small quantum dots.

AB - Anomalously long millisecond kinetics of photoluminescence (PL) is observed at low temperatures (4.2-50 K) in direct-bandgap InAs quantum dots formed in an AlAs matrix. An increase in temperature leads to a decrease in the duration of PL decay down to several nanoseconds at 300 K, whereas the integral PL intensity remains constant up to 210 K. In order to explain the experimental results, a model is proposed that takes into account the singlet-triplet splitting of exciton levels in small quantum dots.

UR - https://www.scopus.com/pages/publications/13944276623

U2 - 10.1134/1.1581967

DO - 10.1134/1.1581967

M3 - Article

AN - SCOPUS:13944276623

SN - 0021-3640

VL - 77

SP - 389

EP - 392

JO - JETP Letters

JF - JETP Letters

IS - 7

ER -

Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix

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