Model of photoluminescence of InAs quantum dots embedded in indirect band gap algaas matrixes

T. S. Shamirzaev, A. M. Gilinsky, A. I. Toropov, A. K. Bakarov, D. A. Tenne, K. S. Zhuravlev, S. Schulze, C. Von Borczyskowski, D. R.T. Zahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrixes has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots.

Original languageEnglish
Title of host publication8th Korea-Russia International Symposium on Science and Technology - Proceedings
Subtitle of host publicationKORUS 2004
Pages157-160
Number of pages4
StatePublished - 2005
Event8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation
Duration: 26 Jun 20043 Jul 2004

Publication series

Name8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Volume3

Conference

Conference8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
Country/TerritoryRussian Federation
CityTomsk
Period26/06/043/07/04

Keywords

  • Photoluminescence
  • Quantum dots
  • Splitting of exciton levels

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