Modeling Memristor Radiation Interaction Events and the Effect on Neuromorphic Learning Circuits

Sumedha Gandharava Dahl, Robert Ivans, Kurtis Cantley

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Scopus citations

Abstract

An ideal memristor model is modified to include the effects of radiation interactions with the device. Modeling is done in Cadence Virtuoso design suite using Verilog-A. Simulations include the effect of radiation events that could change the state of device or can ionize the device to create e h + pairs or change the off-state resistance of the device. Combination of these events occurring simultaneously is also studied. Simulation results are compared with the experimental results published in existing research papers. Finally, transient simulation of a three-input, two-output spiking electronic neural network with memristive synapses is performed. Varying amounts of energy deposited by radiation are modeled, and it is observed that radiation exposure dramatically alters the synaptic weight evolution.

Original languageAmerican English
Title of host publicationICONS '18: Proceedings of the International Conference on Neuromorphic Systems
DOIs
StatePublished - 1 Jan 2018

Keywords

  • memristor
  • neuromorphic
  • radiation

EGS Disciplines

  • Electrical and Computer Engineering

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