Modeling temperature dependency (6 - 400K) of the leakage current through the SiO2/high-K Stacks

L. Vandelli; A. Padovani; L. Larcher; R. G. Southwick; W. B. Knowlton; G. Bersuker

doi:10.1109/ESSDERC.2010.5618204

Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks

L. Vandelli, A. Padovani, L. Larcher, R. G. Southwick, W. B. Knowlton, G. Bersuker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

21 Scopus citations

Abstract

We investigate the mechanism of the gate leakage current in the Si/SiO ₂/HfO₂/TiN stacks in a wide temperature range (6 - 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the temperature dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.

Original language	American English
Title of host publication	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	388-391
Number of pages	4
ISBN (Print)	9781424466610
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618204
State	Published - 2010
Event	2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain Duration: 14 Sep 2010 → 16 Sep 2010

Publication series

Name	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference	2010 European Solid State Device Research Conference, ESSDERC 2010
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

EGS Disciplines

Materials Science and Engineering

Access to Document

10.1109/ESSDERC.2010.5618204

Cite this

Vandelli, L., Padovani, A., Larcher, L., Southwick, R. G., Knowlton, W. B., & Bersuker, G. (2010). Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 388-391). Article 5618204 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSDERC.2010.5618204

Vandelli, L. ; Padovani, A. ; Larcher, L. et al. / Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. pp. 388-391 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

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title = "Modeling temperature dependency (6 - 400K) of the leakage current through the SiO2/high-K Stacks",

abstract = "We investigate the mechanism of the gate leakage current in the Si/SiO 2/HfO2/TiN stacks in a wide temperature range (6 - 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the temperature dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.",

author = "L. Vandelli and A. Padovani and L. Larcher and Southwick, \{R. G.\} and Knowlton, \{W. B.\} and G. Bersuker",

year = "2010",

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language = "American English",

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series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

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Vandelli, L, Padovani, A, Larcher, L, Southwick, RG, Knowlton, WB & Bersuker, G 2010, Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618204, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, Institute of Electrical and Electronics Engineers Inc., pp. 388-391, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSDERC.2010.5618204

Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks. / Vandelli, L.; Padovani, A.; Larcher, L. et al.
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. Institute of Electrical and Electronics Engineers Inc., 2010. p. 388-391 5618204 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We investigate the mechanism of the gate leakage current in the Si/SiO 2/HfO2/TiN stacks in a wide temperature range (6 - 400 K) by simulating the electron transport using a multi-phonon trap assisted tunneling model. Good agreement between simulations and measurements allows indentifying the dominant physical processes controlling the temperature dependency of the gate current. In depletion/weak inversion, the current is limited by the supply of carrier. In strong inversion, the electron-phonon interaction is found to be the dominant factor determining the current voltage and temperature dependencies. These simulations allowed to extract important defect parameters, e.g. the trap relaxation energy and phonon effective energy, which defines the defect atomic structure.

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Vandelli L, Padovani A, Larcher L, Southwick RG, Knowlton WB, Bersuker G. Modeling temperature dependency (6 - 400K) of the leakage current through the SiO₂/high-K Stacks. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. Institute of Electrical and Electronics Engineers Inc. 2010. p. 388-391. 5618204. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). doi: 10.1109/ESSDERC.2010.5618204