Nanocrystalline silicon thin film transistors for neuromorphic applications

E. M. Vogel, A. Subramaniam, K. D. Cantley

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper briefly reviews some of our recent work on the fabrication, modeling and characterization of neuromorphic circuits using nanocrystalline-silicon (nc-Si) thin-film transistors (TFTs) and memristive (resistive switch) devices (1-11). SPICE models of our fabricated devices are presented. Complex synaptic and learning behavior is demonstrated as a natural outcome of using these specific devices. The fabrication processes are consistent with the use of glass or flexible substrates. Therefore, the neuromorphic architecture may provide for information processing that is more efficient than that expected for conventional TFT circuitry.

Original languageEnglish
Title of host publication2013 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 4
Pages311-319
Number of pages9
Edition1
DOIs
StatePublished - 2013
Event4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013 - Villard-de-Lans, France
Duration: 7 Jul 201312 Jul 2013

Publication series

NameECS Transactions
Number1
Volume54
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013
Country/TerritoryFrance
CityVillard-de-Lans
Period7/07/1312/07/13

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