Novel Slurry Solutions for Thick Cu CMP

Peter A. Miranda; Jerome A. Imonigie; Aaron L. Erbe; Amy J. Moll

doi:10.1109/WMED.2005.1431630

Novel Slurry Solutions for Thick Cu CMP

Peter A. Miranda, Jerome A. Imonigie, Aaron L. Erbe, Amy J. Moll

Micron School of Materials Science and Engineering

Boise State University

Research output: Contribution to journal › Article › peer-review

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Abstract

Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

Original language	American English
Journal	IEEE Workshop on Microelectronics and Electron Devices, 2005
DOIs	https://doi.org/10.1109/WMED.2005.1431630
State	Published - 1 Apr 2005

Keywords

chemical mechanical polishing
copper
electroplating
integrated circuit interconnections
slurries

EGS Disciplines

Computer Engineering
Electrical and Computer Engineering

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title = "Novel Slurry Solutions for Thick Cu CMP",

abstract = " Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.",

keywords = "chemical mechanical polishing, copper, electroplating, integrated circuit interconnections, slurries",

author = "Miranda, {Peter A.} and Imonigie, {Jerome A.} and Erbe, {Aaron L.} and Moll, {Amy J.}",

year = "2005",

month = apr,

day = "1",

doi = "10.1109/WMED.2005.1431630",

language = "American English",

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TY - JOUR

T1 - Novel Slurry Solutions for Thick Cu CMP

AU - Miranda, Peter A.

AU - Imonigie, Jerome A.

AU - Erbe, Aaron L.

AU - Moll, Amy J.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

AB - Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

KW - chemical mechanical polishing

KW - copper

KW - electroplating

KW - integrated circuit interconnections

KW - slurries

UR - https://scholarworks.boisestate.edu/electrical_facpubs/21

U2 - 10.1109/WMED.2005.1431630

DO - 10.1109/WMED.2005.1431630

M3 - Article

JO - IEEE Workshop on Microelectronics and Electron Devices, 2005

JF - IEEE Workshop on Microelectronics and Electron Devices, 2005

ER -

Novel Slurry Solutions for Thick Cu CMP

Abstract

Keywords

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