Novel Slurry Solutions for Thick Cu CMP

Peter A. Miranda; Jerome A. Imonigie; Aaron L. Erbe; Amy J. Moll

doi:10.1109/WMED.2005.1431630

Novel Slurry Solutions for Thick Cu CMP

Peter A. Miranda
, Jerome A. Imonigie
, Aaron L. Erbe
, Amy J. Moll

Micron School of Materials Science and Engineering

Boise State University

Research output: Contribution to journal › Conference article › peer-review

7 Downloads (Pure)

Abstract

Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

Original language	American English
Pages (from-to)	92-94
Number of pages	3
Journal	IEEE Workshop on Microelectronics and Electron Devices, 2005
DOIs	https://doi.org/10.1109/WMED.2005.1431630
State	Published - 2005

Keywords

chemical mechanical polishing
copper
electroplating
integrated circuit interconnections
slurries

EGS Disciplines

Computer Engineering
Electrical and Computer Engineering

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10.1109/WMED.2005.1431630License: Unspecified

https://scholarworks.boisestate.edu/electrical_facpubs/104/License: Other

Cite this

@article{f816a8076be44ccc9fdffcd4de709ff2,

title = "Novel Slurry Solutions for Thick Cu CMP",

abstract = " Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.",

keywords = "chemical mechanical polishing, copper, electroplating, integrated circuit interconnections, slurries",

author = "Miranda, \{Peter A.\} and Imonigie, \{Jerome A.\} and Erbe, \{Aaron L.\} and Moll, \{Amy J.\}",

year = "2005",

doi = "10.1109/WMED.2005.1431630",

language = "American English",

pages = "92--94",

}

TY - JOUR

T1 - Novel Slurry Solutions for Thick Cu CMP

AU - Miranda, Peter A.

AU - Imonigie, Jerome A.

AU - Erbe, Aaron L.

AU - Moll, Amy J.

PY - 2005

Y1 - 2005

N2 - Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

AB - Electro-plating methods currently used to deposit Cu in through-wafer interconnect applications result in the formation of a thick Cu layer with large amounts of topographical variation. In this paper, alternative methods for thick Cu removal are investigated using a two-step slurry CMP approach.

KW - chemical mechanical polishing

KW - copper

KW - electroplating

KW - integrated circuit interconnections

KW - slurries

UR - https://www.scopus.com/pages/publications/33744471418

U2 - 10.1109/WMED.2005.1431630

DO - 10.1109/WMED.2005.1431630

M3 - Conference article

SP - 92

EP - 94

JO - IEEE Workshop on Microelectronics and Electron Devices, 2005

JF - IEEE Workshop on Microelectronics and Electron Devices, 2005

ER -

Novel Slurry Solutions for Thick Cu CMP

Abstract

Keywords

EGS Disciplines

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