Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers

Uwe Gaitzsch; Jessica Drache; Ken McDonald; Peter Müllner; Paul Lindquist

doi:10.1016/j.tsf.2012.08.019

Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers

Uwe Gaitzsch, Jessica Drache, Ken McDonald, Peter Müllner, Paul Lindquist

Micron School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 °C to form a Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L2₁-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities.

Original language	American English
Pages (from-to)	171-174
Number of pages	4
Journal	Thin Solid Films
Volume	522
DOIs	https://doi.org/10.1016/j.tsf.2012.08.019
State	Published - 1 Nov 2012

Keywords

Electrodeposition
Magnetic shape memory
Magnetization
Ni-Mn-Ga

EGS Disciplines

Materials Science and Engineering

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10.1016/j.tsf.2012.08.019

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title = "Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers",

abstract = "Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 °C to form a Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L21-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities.",

keywords = "Electrodeposition, Magnetic shape memory, Magnetization, Ni-Mn-Ga",

author = "Uwe Gaitzsch and Jessica Drache and Ken McDonald and Peter M{\"u}llner and Paul Lindquist",

year = "2012",

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day = "1",

doi = "10.1016/j.tsf.2012.08.019",

language = "American English",

volume = "522",

pages = "171--174",

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TY - JOUR

T1 - Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers

AU - Gaitzsch, Uwe

AU - Drache, Jessica

AU - McDonald, Ken

AU - Müllner, Peter

AU - Lindquist, Paul

PY - 2012/11/1

Y1 - 2012/11/1

N2 - Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 °C to form a Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L21-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities.

AB - Ni-Mn-Ga thin films are promising candidates for MicroElectroMechanical Systems. Triple-layers of nickel, manganese, and gallium were electrodeposited from chemical solutions on to tungsten and molybdenum refractory metal substrates. These layered films were subsequently annealed at 800 to 900 °C to form a Ni-Mn-Ga Heusler alloy by diffusion. To evaluate the quality of the film, the magnetization of the Ni-Mn-Ga film was measured and normalized by the magnetization of nickel, yielding the relative magnetization. Due to the formation of Ni-Mn-Ga during annealing, the relative magnetization was approximately 2 times larger than the tri-layered as-plated film. These results are comparable to bulk Ni-Mn-Ga reference samples. X-ray diffraction measurements confirmed that the material was present as a mixture of L21-ordered austenite as well as modulated 10 M and non modulated martensite with manganese oxide impurities.

KW - Electrodeposition

KW - Magnetic shape memory

KW - Magnetization

KW - Ni-Mn-Ga

UR - https://www.scopus.com/pages/publications/84868595916

UR - https://scholarworks.boisestate.edu/mse_facpubs/122

U2 - 10.1016/j.tsf.2012.08.019

DO - 10.1016/j.tsf.2012.08.019

M3 - Article

SN - 0040-6090

VL - 522

SP - 171

EP - 174

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Obtaining of Ni-Mn-Ga Magnetic Shape Memory Alloy by Annealing Electrochemically Deposited Ga/Mn/Ni Layers

Abstract

Keywords

EGS Disciplines

Access to Document

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