On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

William B. Knowlton; Santosh Kumar; Theodora Caldwell; Jose J. Gomez; Betsy Cheek

On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

William B. Knowlton, Santosh Kumar, Theodora Caldwell, Jose J. Gomez, Betsy Cheek

Micron School of Materials Science and Engineering

Boise State University

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

Preliminary Pulse (dynamic) stress testing (PVS) results performed in accumulation indicate that degradation and breakdown mechanisms occur such as stress induced leakage current (SILC) and hard breakdown (HBD) as previously reported. Additional degradation and breakdown mechanisms due to PVS were observed for the first time such as soft breakdown (SBD), limited hard breakdown (LHBD) and moderate breakdown (MBD). Finally, post-PVS induced LHBD I-V measurements show the leakage current in accumulation is more than 5 orders of magnitude greater than in inversion at similar voltages.

Original language	English
Pages	87-88
Number of pages	2
State	Published - 2001
Event	2001 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, United States Duration: 15 Oct 2001 → 18 Oct 2001

Conference

Conference	2001 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	Lake Tahoe, CA
Period	15/10/01 → 18/10/01

Cite this

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title = "On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs",

abstract = "Preliminary Pulse (dynamic) stress testing (PVS) results performed in accumulation indicate that degradation and breakdown mechanisms occur such as stress induced leakage current (SILC) and hard breakdown (HBD) as previously reported. Additional degradation and breakdown mechanisms due to PVS were observed for the first time such as soft breakdown (SBD), limited hard breakdown (LHBD) and moderate breakdown (MBD). Finally, post-PVS induced LHBD I-V measurements show the leakage current in accumulation is more than 5 orders of magnitude greater than in inversion at similar voltages.",

author = "Knowlton, {William B.} and Santosh Kumar and Theodora Caldwell and Gomez, {Jose J.} and Betsy Cheek",

year = "2001",

language = "English",

pages = "87--88",

note = "2001 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 15-10-2001 Through 18-10-2001",

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TY - CONF

T1 - On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

AU - Knowlton, William B.

AU - Kumar, Santosh

AU - Caldwell, Theodora

AU - Gomez, Jose J.

AU - Cheek, Betsy

PY - 2001

Y1 - 2001

N2 - Preliminary Pulse (dynamic) stress testing (PVS) results performed in accumulation indicate that degradation and breakdown mechanisms occur such as stress induced leakage current (SILC) and hard breakdown (HBD) as previously reported. Additional degradation and breakdown mechanisms due to PVS were observed for the first time such as soft breakdown (SBD), limited hard breakdown (LHBD) and moderate breakdown (MBD). Finally, post-PVS induced LHBD I-V measurements show the leakage current in accumulation is more than 5 orders of magnitude greater than in inversion at similar voltages.

AB - Preliminary Pulse (dynamic) stress testing (PVS) results performed in accumulation indicate that degradation and breakdown mechanisms occur such as stress induced leakage current (SILC) and hard breakdown (HBD) as previously reported. Additional degradation and breakdown mechanisms due to PVS were observed for the first time such as soft breakdown (SBD), limited hard breakdown (LHBD) and moderate breakdown (MBD). Finally, post-PVS induced LHBD I-V measurements show the leakage current in accumulation is more than 5 orders of magnitude greater than in inversion at similar voltages.

UR - http://www.scopus.com/inward/record.url?scp=0035568797&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035568797

SP - 87

EP - 88

T2 - 2001 IEEE International Integrated Reliability Workshop Final Report

Y2 - 15 October 2001 through 18 October 2001

ER -

On the nature of ultra-thin gate oxide degradation during pulse stressing of nMOSCAPs

Abstract

Conference

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