On the Thermal Activation of Negative Bias Temperature Instability

Richard G. Southwick; William B. Knowlton; Ben Kaczer; Tibor Grasser

doi:10.1109/IRWS.2009.5383038

On the Thermal Activation of Negative Bias Temperature Instability

Richard G. Southwick, William B. Knowlton, Ben Kaczer, Tibor Grasser

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO₂ devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon.

Original language	American English
Title of host publication	2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	36-41
Number of pages	6
ISBN (Print)	9781424439218
DOIs	https://doi.org/10.1109/IRWS.2009.5383038
State	Published - 2009
Event	2009 IEEE International Integrated Reliability Workshop, IIRW 2009 - South Lake Tahoe, CA, United States Duration: 18 Oct 2009 → 22 Oct 2009

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2009 IEEE International Integrated Reliability Workshop, IIRW 2009
Country/Territory	United States
City	South Lake Tahoe, CA
Period	18/10/09 → 22/10/09

Keywords

MOSFET
silicon compounds
thermal analysis
tunnelling

EGS Disciplines

Materials Science and Engineering

Access to Document

10.1109/IRWS.2009.5383038

On the Thermal Activation of Negative Bias Temperature InstabilitFinal published version, 348 KBLicense: Other

Cite this

Southwick, R. G., Knowlton, W. B., Kaczer, B., & Grasser, T. (2009). On the Thermal Activation of Negative Bias Temperature Instability. In 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009 (pp. 36-41). Article 5383038 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2009.5383038

@inproceedings{7bfe9d8c955d4aec85b990d99fc6d1f5,

title = "On the Thermal Activation of Negative Bias Temperature Instability",

abstract = "The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the {"}classical{"} NBTI phenomenon.",

keywords = "MOSFET, silicon compounds, thermal analysis, tunnelling",

author = "Southwick, \{Richard G.\} and Knowlton, \{William B.\} and Ben Kaczer and Tibor Grasser",

year = "2009",

doi = "10.1109/IRWS.2009.5383038",

language = "American English",

isbn = "9781424439218",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "36--41",

booktitle = "2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009",

address = "United States",

note = "2009 IEEE International Integrated Reliability Workshop, IIRW 2009 ; Conference date: 18-10-2009 Through 22-10-2009",

}

Southwick, RG, Knowlton, WB, Kaczer, B & Grasser, T 2009, On the Thermal Activation of Negative Bias Temperature Instability. in 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009., 5383038, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 36-41, 2009 IEEE International Integrated Reliability Workshop, IIRW 2009, South Lake Tahoe, CA, United States, 18/10/09. https://doi.org/10.1109/IRWS.2009.5383038

On the Thermal Activation of Negative Bias Temperature Instability. / Southwick, Richard G.; Knowlton, William B.; Kaczer, Ben et al.
2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. Institute of Electrical and Electronics Engineers Inc., 2009. p. 36-41 5383038 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On the Thermal Activation of Negative Bias Temperature Instability

AU - Southwick, Richard G.

AU - Knowlton, William B.

AU - Kaczer, Ben

AU - Grasser, Tibor

PY - 2009

Y1 - 2009

N2 - The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon.

AB - The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ∼12ms to 100s. Results indicate that classic NBTI degradation is observed down to ∼200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon.

KW - MOSFET

KW - silicon compounds

KW - thermal analysis

KW - tunnelling

UR - https://www.scopus.com/pages/publications/77951048127

U2 - 10.1109/IRWS.2009.5383038

DO - 10.1109/IRWS.2009.5383038

M3 - Conference contribution

SN - 9781424439218

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 36

EP - 41

BT - 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2009 IEEE International Integrated Reliability Workshop, IIRW 2009

Y2 - 18 October 2009 through 22 October 2009

ER -

Southwick RG, Knowlton WB, Kaczer B, Grasser T. On the Thermal Activation of Negative Bias Temperature Instability. In 2009 IEEE International Integrated Reliability Workshop Final Report, IIRW 2009. Institute of Electrical and Electronics Engineers Inc. 2009. p. 36-41. 5383038. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2009.5383038

On the Thermal Activation of Negative Bias Temperature Instability

Abstract

Publication series

Conference

Keywords

EGS Disciplines

Access to Document

Other files and links

Fingerprint

Cite this