Optical characterization of PTCDA films grown on passivated semiconductor substrates

T. U. Kampen; G. Salvan; M. Friedrich; D. A. Tenne; S. Park; D. R.T. Zahn

doi:10.1016/S0169-4332(00)00454-2

Optical characterization of PTCDA films grown on passivated semiconductor substrates

T. U. Kampen, G. Salvan, M. Friedrich, D. A. Tenne, S. Park, D. R.T. Zahn

Physics Department

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) was deposited on passivated Si(111) and GaAs(001) surfaces using organic molecular beam deposition (OMBD). The growth of the PTCDA films was monitored in situ and on-line by means of Raman spectroscopy. In addition, ex situ infrared (IR) spectra were recorded in order to observe the non-Raman active modes. Raman and IR spectra reveal molecular vibrational modes, allowing us to characterize the structural quality of the PTCDA films and the interaction with the substrate.

Original language	English
Pages (from-to)	387-391
Number of pages	5
Journal	Applied Surface Science
Volume	166
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(00)00454-2
State	Published - 9 Oct 2000

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abstract = "3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) was deposited on passivated Si(111) and GaAs(001) surfaces using organic molecular beam deposition (OMBD). The growth of the PTCDA films was monitored in situ and on-line by means of Raman spectroscopy. In addition, ex situ infrared (IR) spectra were recorded in order to observe the non-Raman active modes. Raman and IR spectra reveal molecular vibrational modes, allowing us to characterize the structural quality of the PTCDA films and the interaction with the substrate.",

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AU - Kampen, T. U.

AU - Salvan, G.

AU - Friedrich, M.

AU - Tenne, D. A.

AU - Park, S.

AU - Zahn, D. R.T.

PY - 2000/10/9

Y1 - 2000/10/9

N2 - 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) was deposited on passivated Si(111) and GaAs(001) surfaces using organic molecular beam deposition (OMBD). The growth of the PTCDA films was monitored in situ and on-line by means of Raman spectroscopy. In addition, ex situ infrared (IR) spectra were recorded in order to observe the non-Raman active modes. Raman and IR spectra reveal molecular vibrational modes, allowing us to characterize the structural quality of the PTCDA films and the interaction with the substrate.

AB - 3,4,9,10-Perylenetetracarboxylic dianhydride (PTCDA) was deposited on passivated Si(111) and GaAs(001) surfaces using organic molecular beam deposition (OMBD). The growth of the PTCDA films was monitored in situ and on-line by means of Raman spectroscopy. In addition, ex situ infrared (IR) spectra were recorded in order to observe the non-Raman active modes. Raman and IR spectra reveal molecular vibrational modes, allowing us to characterize the structural quality of the PTCDA films and the interaction with the substrate.

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U2 - 10.1016/S0169-4332(00)00454-2

DO - 10.1016/S0169-4332(00)00454-2

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VL - 166

SP - 387

EP - 391

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

Optical characterization of PTCDA films grown on passivated semiconductor substrates

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