TY - JOUR
T1 - Orientation Dependence of Dielectric and Relaxor Behaviour in Aurivillius Phase BaBi2Nb2O9 Ceramics Prepared by Spark Plasma Sintering
AU - Yan, Haixue
AU - Zhang, Hongtao
AU - Ubic, Rick
AU - Reece, Mike
AU - Liu, Jing
AU - Shen, Zhijian
PY - 2006/9
Y1 - 2006/9
N2 - Grain-oriented Aurivillius phase BaBi 2 Nb 2 O 9 ceramics were fabricated using Spark Plasma Sintering (SPS). Their relaxor behaviour was confirmed by a strong frequency dispersion of the dielectric response. The dielectric behaviour has been fitted using different relaxor models. The relaxor parameters are isotropic, while the dielectric constants are highly anisotropic. The piezoelectric constant d 33 is zero perpendicular and parallel to the hot pressing direction, and the P–E response is dominated by losses. The inability to pole the samples at room temperature is consistent with the τ ƒ temperature ( ~ ~115 K) estimated from fitting the experimental data to the Vogel–Fulcher model. This suggests that it may be possible to observe piezoelectric and ferroelectric properties at very low temperatures.
AB - Grain-oriented Aurivillius phase BaBi 2 Nb 2 O 9 ceramics were fabricated using Spark Plasma Sintering (SPS). Their relaxor behaviour was confirmed by a strong frequency dispersion of the dielectric response. The dielectric behaviour has been fitted using different relaxor models. The relaxor parameters are isotropic, while the dielectric constants are highly anisotropic. The piezoelectric constant d 33 is zero perpendicular and parallel to the hot pressing direction, and the P–E response is dominated by losses. The inability to pole the samples at room temperature is consistent with the τ ƒ temperature ( ~ ~115 K) estimated from fitting the experimental data to the Vogel–Fulcher model. This suggests that it may be possible to observe piezoelectric and ferroelectric properties at very low temperatures.
UR - http://dx.doi.org/10.1007/s10854-006-0017-0
UR - http://www.scopus.com/inward/record.url?scp=33749249196&partnerID=8YFLogxK
U2 - 10.1007/s10854-006-0017-0
DO - 10.1007/s10854-006-0017-0
M3 - Article
VL - 17
SP - 657
EP - 661
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 9
ER -