Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

S. A. Stockman, J. W. Huang, T. D. Osentowski, H. C. Chui, M. J. Peanasky, S. A. Maranowski, P. N. Grillot, A. J. Moll, C. H. Chen, C. P. Kuo, B. W. Liang

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16 Scopus citations

Abstract

Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

Original languageEnglish
Pages (from-to)916-925
Number of pages10
JournalJournal of Electronic Materials
Volume28
Issue number7
DOIs
StatePublished - Jul 1999

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