Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

S. A. Stockman; J. W. Huang; T. D. Osentowski; H. C. Chui; M. J. Peanasky; S. A. Maranowski; P. N. Grillot; A. J. Moll; C. H. Chen; C. P. Kuo; B. W. Liang

doi:10.1007/s11664-999-0220-x

Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

S. A. Stockman
, J. W. Huang
, T. D. Osentowski
, H. C. Chui
, M. J. Peanasky
, S. A. Maranowski
, P. N. Grillot
, A. J. Moll
, C. H. Chen
, C. P. Kuo
, B. W. Liang

Micron School of Materials Science and Engineering

Hewlett-Packard

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Oxygen incorporation in Al_yIn_1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH₃ flow, growth temperature, and alloy composition. Both O₂ and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O₂ or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

Original language	English
Pages (from-to)	916-925
Number of pages	10
Journal	Journal of Electronic Materials
Volume	28
Issue number	7
DOIs	https://doi.org/10.1007/s11664-999-0220-x
State	Published - Jul 1999

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title = "Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium",

abstract = "Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10\% of the oxygen atoms act as compensating donors.",

author = "Stockman, \{S. A.\} and Huang, \{J. W.\} and Osentowski, \{T. D.\} and Chui, \{H. C.\} and Peanasky, \{M. J.\} and Maranowski, \{S. A.\} and Grillot, \{P. N.\} and Moll, \{A. J.\} and Chen, \{C. H.\} and Kuo, \{C. P.\} and Liang, \{B. W.\}",

year = "1999",

month = jul,

doi = "10.1007/s11664-999-0220-x",

language = "English",

volume = "28",

pages = "916--925",

number = "7",

}

TY - JOUR

T1 - Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

AU - Stockman, S. A.

AU - Huang, J. W.

AU - Osentowski, T. D.

AU - Chui, H. C.

AU - Peanasky, M. J.

AU - Maranowski, S. A.

AU - Grillot, P. N.

AU - Moll, A. J.

AU - Chen, C. H.

AU - Kuo, C. P.

AU - Liang, B. W.

PY - 1999/7

Y1 - 1999/7

N2 - Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

AB - Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

UR - https://www.scopus.com/pages/publications/0032691631

U2 - 10.1007/s11664-999-0220-x

DO - 10.1007/s11664-999-0220-x

M3 - Article

AN - SCOPUS:0032691631

SN - 0361-5235

VL - 28

SP - 916

EP - 925

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

Abstract

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