Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

S. A. Stockman; J. W. Huang; T. D. Osentowski; H. C. Chui; M. J. Peanasky; S. A. Maranowski; P. N. Grillot; A. J. Moll; C. H. Chen; C. P. Kuo; B. W. Liang

doi:10.1007/s11664-999-0220-x

Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

S. A. Stockman, J. W. Huang, T. D. Osentowski, H. C. Chui, M. J. Peanasky, S. A. Maranowski, P. N. Grillot, A. J. Moll, C. H. Chen, C. P. Kuo, B. W. Liang

Micron School of Materials Science and Engineering

Hewlett-Packard

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Oxygen incorporation in Al_yIn_1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH₃ flow, growth temperature, and alloy composition. Both O₂ and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O₂ or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

Original language	English
Pages (from-to)	916-925
Number of pages	10
Journal	Journal of Electronic Materials
Volume	28
Issue number	7
DOIs	https://doi.org/10.1007/s11664-999-0220-x
State	Published - Jul 1999

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title = "Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium",

abstract = "Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10\% of the oxygen atoms act as compensating donors.",

author = "Stockman, \{S. A.\} and Huang, \{J. W.\} and Osentowski, \{T. D.\} and Chui, \{H. C.\} and Peanasky, \{M. J.\} and Maranowski, \{S. A.\} and Grillot, \{P. N.\} and Moll, \{A. J.\} and Chen, \{C. H.\} and Kuo, \{C. P.\} and Liang, \{B. W.\}",

year = "1999",

month = jul,

doi = "10.1007/s11664-999-0220-x",

language = "English",

volume = "28",

pages = "916--925",

number = "7",

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TY - JOUR

T1 - Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

AU - Stockman, S. A.

AU - Huang, J. W.

AU - Osentowski, T. D.

AU - Chui, H. C.

AU - Peanasky, M. J.

AU - Maranowski, S. A.

AU - Grillot, P. N.

AU - Moll, A. J.

AU - Chen, C. H.

AU - Kuo, C. P.

AU - Liang, B. W.

PY - 1999/7

Y1 - 1999/7

N2 - Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

AB - Oxygen incorporation in AlyIn1-yP (y approx. 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

UR - https://www.scopus.com/pages/publications/0032691631

U2 - 10.1007/s11664-999-0220-x

DO - 10.1007/s11664-999-0220-x

M3 - Article

AN - SCOPUS:0032691631

SN - 0361-5235

VL - 28

SP - 916

EP - 925

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Oxygen incorporation in AlInP, and its effect on P-type doping with magnesium

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