PECVD of GexS1−x Films for Nano-Ionic Redox Conductive Bridge Memristive Switch Memory

Muhammad Rizwan Latif; Maria Mitkova; Gary Tompa; Elane Coleman

doi:10.1109/WMED.2013.6544504

PECVD of Ge_xS_1−x Films for Nano-Ionic Redox Conductive Bridge Memristive Switch Memory

Muhammad Rizwan Latif, Maria Mitkova, Gary Tompa, Elane Coleman

Electrical Engineering Department

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.

Original language	American English
Journal	2013 IEEE Workshop on Microelectronics and Electron Devices
DOIs	https://doi.org/10.1109/WMED.2013.6544504
State	Published - 12 Apr 2013

Keywords

Redox conductive bridge memristors
chalcogenide glass
film and device characterization
silver
solid electrolyte

EGS Disciplines

Electrical and Computer Engineering

Access to Document

10.1109/WMED.2013.6544504License: Unspecified

PECVD of Ge sub x sub S sub 1 x sub Films for Nano-Ionic RedoxFinal published version, 254 KBLicense: Unspecified

Cite this

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title = "PECVD of GexS1−x Films for Nano-Ionic Redox Conductive Bridge Memristive Switch Memory",

abstract = " This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.",

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AU - Latif, Muhammad Rizwan

AU - Mitkova, Maria

AU - Tompa, Gary

AU - Coleman, Elane

PY - 2013/4/12

Y1 - 2013/4/12

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AB - This study is related to fabrication and characterization of redox conductive bridge memristors (RCBM). An active region in RCBM is formed by chalcogenide glass (ChG) doped with silver (Ag). We report the application of plasma enhanced chemical vapor deposition (PECVD) method for depositing ChG films which gives the advantage of flexibility in the composition and structure not easily achieved with sputtering or thermal evaporation. The growth kinetics of the deposition process, as well as the properties of the films is investigated. Optimal deposition conditions for reliable device performance are determined. The electrical characteristics of the devices fabricated at these conditions are also tested.

KW - Redox conductive bridge memristors

KW - chalcogenide glass

KW - film and device characterization

KW - silver

KW - solid electrolyte

UR - https://scholarworks.boisestate.edu/electrical_facpubs/232

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M3 - Article

JO - 2013 IEEE Workshop on Microelectronics and Electron Devices

JF - 2013 IEEE Workshop on Microelectronics and Electron Devices

ER -