Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals

Jeffrey S. King, Elton Graugnard, Christopher J. Summers

Research output: Contribution to journalArticlepeer-review

Abstract

<div class="line" id="line-9"> The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS:Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl&minus; and Mn2+ emission peaks at 460 and 585&emsp13;nm were demonstrated, respectively.</div>
Original languageAmerican English
JournalApplied Physics Letters
Volume88
Issue number8
StatePublished - 20 Feb 2006
Externally publishedYes

Keywords

  • atomic layer deposition
  • band structure
  • etching
  • manganese
  • optical multilayers
  • photoluminescence
  • photonic band gap
  • photonic crystals
  • silicon compounds
  • titanium compounds
  • zinc compounds

EGS Disciplines

  • Mechanical Engineering

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