Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals

Jeffrey S. King; Elton Graugnard; Christopher J. Summers

doi:10.1063/1.2177351

Photoluminescence Modification by High-Order Photonic Bands in TiO₂/ZnS:Mn Multilayer Inverse Opals

Jeffrey S. King
, Elton Graugnard
, Christopher J. Summers

Georgia Institute of Technology

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO₂ opal templates with conformal layers of ZnS : Mn and TiO₂, followed by etching. The optical properties were further tuned by backfilling the structures with TiO₂. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl^−and Mn²⁺ emission peaks at 460 and 585&emsp13;nm were demonstrated, respectively.

Original language	American English
Article number	081109
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2177351
State	Published - 20 Feb 2006
Externally published	Yes

Keywords

atomic layer deposition
band structure
etching
manganese
optical multilayers
photoluminescence
photonic band gap
photonic crystals
silicon compounds
titanium compounds
zinc compounds

EGS Disciplines

Mechanical Engineering

Access to Document

10.1063/1.2177351

Cite this

@article{23bf12c3ae1c4654b8d74e9096431372,

title = "Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals",

abstract = "The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS : Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl\− and Mn2+ emission peaks at 460 and 585\&emsp13;nm were demonstrated, respectively.",

keywords = "atomic layer deposition, band structure, etching, manganese, optical multilayers, photoluminescence, photonic band gap, photonic crystals, silicon compounds, titanium compounds, zinc compounds",

author = "King, \{Jeffrey S.\} and Elton Graugnard and Summers, \{Christopher J.\}",

year = "2006",

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doi = "10.1063/1.2177351",

language = "American English",

volume = "88",

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TY - JOUR

T1 - Photoluminescence Modification by High-Order Photonic Bands in TiO2/ZnS:Mn Multilayer Inverse Opals

AU - King, Jeffrey S.

AU - Graugnard, Elton

AU - Summers, Christopher J.

PY - 2006/2/20

Y1 - 2006/2/20

N2 - The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS : Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl− and Mn2+ emission peaks at 460 and 585&emsp13;nm were demonstrated, respectively.

AB - The formation of multilayered inverse opal photonic crystals by atomic layer deposition has been investigated, and shown to provide a flexible and precise technique to control the properties of photonic crystals. Inverse opals were formed by infiltration of SiO2 opal templates with conformal layers of ZnS : Mn and TiO2, followed by etching. The optical properties were further tuned by backfilling the structures with TiO2. The high-order band structure and its influence on the photoluminescent properties were studied and modification of the Cl− and Mn2+ emission peaks at 460 and 585&emsp13;nm were demonstrated, respectively.

KW - atomic layer deposition

KW - band structure

KW - etching

KW - manganese

KW - optical multilayers

KW - photoluminescence

KW - photonic band gap

KW - photonic crystals

KW - silicon compounds

KW - titanium compounds

KW - zinc compounds

UR - https://www.scopus.com/pages/publications/33644556495

U2 - 10.1063/1.2177351

DO - 10.1063/1.2177351

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081109

ER -