Preliminary study of the breakdown strength of TiN/HfO2/SiO 2/Si MOS gate stacks

Richard G. Southwick; Mark C. Elgin; Gennadi Bersuker; Rino Choi; William B. Knowlton

doi:10.1109/IRWS.2006.305231

Preliminary study of the breakdown strength of TiN/HfO₂/SiO ₂/Si MOS gate stacks

Richard G. Southwick, Mark C. Elgin, Gennadi Bersuker, Rino Choi, William B. Knowlton

Micron School of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength are performed for electron gate injection over a variety of HfO₂ thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO₂ layer thickness decreases.

Original language	English
Title of host publication	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	146-147
Number of pages	2
ISBN (Print)	1424402964, 9781424402960
DOIs	https://doi.org/10.1109/IRWS.2006.305231
State	Published - 2006
Event	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States Duration: 16 Oct 2006 → 19 Oct 2006

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Country/Territory	United States
City	South Lake Tahoe, CA
Period	16/10/06 → 19/10/06

Access to Document

10.1109/IRWS.2006.305231

Cite this

Southwick, R. G., Elgin, M. C., Bersuker, G., Choi, R., & Knowlton, W. B. (2006). Preliminary study of the breakdown strength of TiN/HfO₂/SiO ₂/Si MOS gate stacks. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 146-147). Article 4098708 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2006.305231

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title = "Preliminary study of the breakdown strength of TiN/HfO2/SiO 2/Si MOS gate stacks",

abstract = "Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength are performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases.",

author = "Southwick, {Richard G.} and Elgin, {Mark C.} and Gennadi Bersuker and Rino Choi and Knowlton, {William B.}",

year = "2006",

doi = "10.1109/IRWS.2006.305231",

language = "English",

isbn = "1424402964",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "146--147",

booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

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Southwick, RG, Elgin, MC, Bersuker, G, Choi, R & Knowlton, WB 2006, Preliminary study of the breakdown strength of TiN/HfO₂/SiO ₂/Si MOS gate stacks. in 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098708, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., pp. 146-147, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, United States, 16/10/06. https://doi.org/10.1109/IRWS.2006.305231

Preliminary study of the breakdown strength of TiN/HfO₂/SiO ₂/Si MOS gate stacks. / Southwick, Richard G.; Elgin, Mark C.; Bersuker, Gennadi et al.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. p. 146-147 4098708 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Hafnium oxide integrity is investigated. Time-zero dielectric breakdown tests to determine breakdown strength are performed for electron gate injection over a variety of HfO2 thicknesses. Results indicate the breakdown strength is not purely related to the electric field or voltage drop across the high-k but suggests a combination of both. Reliability of the gate stack seems to improve as the HfO2 layer thickness decreases.

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Southwick RG, Elgin MC, Bersuker G, Choi R, Knowlton WB. Preliminary study of the breakdown strength of TiN/HfO₂/SiO ₂/Si MOS gate stacks. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc. 2006. p. 146-147. 4098708. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305231