Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

Jam Farhoomand; Bill Knowlton; Robert E. McMurray; E. E. Haller

doi:10.1117/12.262760

Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

Jam Farhoomand, Bill Knowlton, Robert E. McMurray, E. E. Haller

Micron School of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-infrared photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.

Original language	English
Pages (from-to)	390-395
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2842
DOIs	https://doi.org/10.1117/12.262760
State	Published - 18 Dec 1996
Event	Millimeter and Submillimeter Waves and Applications III 1996 - Denver, United States Duration: 4 Aug 1996 → 9 Aug 1996

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title = "Preliminary test results of a resonant Ge:Ga far-infrared photoconductor",

abstract = "Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-infrared photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.",

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T1 - Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

AU - Farhoomand, Jam

AU - Knowlton, Bill

AU - McMurray, Robert E.

AU - Haller, E. E.

PY - 1996/12/18

Y1 - 1996/12/18

N2 - Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-infrared photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.

AB - Theoretical analysis indicates that resonant infrared photoconductors can achieve unit quantum efficiency at resonant frequencies. This concept, which is based on establishing a resonant absorption cavity internal to the detector element, offers numerous other enhancements and advantages over conventional detectors. Here, we present an overview of the operation of the device and outline the fabrication process of a Ge:Ga far-infrared photoconductor. The preliminary test results performed on a prototype Ge:Ga detector show the expected resonant fringes with enhanced response. The summary of the results and the status of the project will be discussed.

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U2 - 10.1117/12.262760

DO - 10.1117/12.262760

M3 - Conference article

AN - SCOPUS:85076880703

SN - 0277-786X

VL - 2842

SP - 390

EP - 395

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Millimeter and Submillimeter Waves and Applications III 1996

Y2 - 4 August 1996 through 9 August 1996

ER -

Preliminary test results of a resonant Ge:Ga far-infrared photoconductor

Abstract

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