Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

  • D. A. Tenne
  • , A. Bruchhausen
  • , N. D. Lanzillotti-Kimura
  • , A. Fainstein
  • , R. S. Katiyar
  • , A. Cantarero
  • , A. Soukiassian
  • , V. Vaithyanathan
  • , J. H. Haeni
  • , W. Tian
  • , D. G. Schlom
  • , K. J. Choi
  • , D. M. Kim
  • , C. B. Eom
  • , H. P. Sun
  • , X. Q. Pan
  • , Y. L. Li
  • , L. Q. Chen
  • , Q. X. Jia
  • , S. M. Nakhmanson
  • K. M. Rabe, X. X. Xi

Research output: Contribution to journalArticlepeer-review

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Abstract

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by ∼500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

Original languageAmerican English
Pages (from-to)1614-1616
Number of pages3
JournalScience
Volume313
Issue number5793
DOIs
StatePublished - 15 Sep 2006

EGS Disciplines

  • Physics

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