Abstract
Thermoelectric properties of nanostructured half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface shows excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and electrical conductivities are attributed to irradiation-induced defects that act as scattering sources for phonons and charge carriers.
Original language | American English |
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Article number | 243902 |
Journal | Applied Physics Letters |
Volume | 112 |
Issue number | 24 |
DOIs | |
State | Published - 11 Jun 2018 |
Keywords
- electrical conductivity
- electronic transport
- phonons
- semiconductors
- thermoelectric effects
- materials analysis
EGS Disciplines
- Materials Science and Engineering