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Proton Irradiation Effect on Thermoelectric Properties of Nanostructured N-Type Half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01

  • Nicholas Kempf
  • , Chinnathambi Karthik
  • , Brian J. Jaques
  • , Jonathan Gigax
  • , Lin Shao
  • , Darryl P. Butt
  • , Ran He
  • , Dezhi Wang
  • , Zhifeng Ren
  • , Yanliang Zhang
  • University of Notre Dame
  • Boise State University
  • Texas A&M University
  • University of Utah
  • University of Houston

Research output: Contribution to journalArticlepeer-review

11 Scopus citations
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Abstract

Thermoelectric properties of nanostructured half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface shows excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and electrical conductivities are attributed to irradiation-induced defects that act as scattering sources for phonons and charge carriers.

Original languageAmerican English
Article number243902
JournalApplied Physics Letters
Volume112
Issue number24
DOIs
StatePublished - 11 Jun 2018

Keywords

  • electrical conductivity
  • electronic transport
  • phonons
  • semiconductors
  • thermoelectric effects
  • materials analysis

EGS Disciplines

  • Materials Science and Engineering

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