Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques

Keyphrases

• Doping Concentration 100%
• Diluted Magnetic Semiconductors 100%
• Proton Beam Therapy 100%
• Dopant 66%
• Room Temperature Ferromagnetism 66%
• Rutherford Backscattering Spectrometry 66%
• Magnetic Transition 66%
• Synthesis Methods 33%
• Ion Implantation 33%
• Magnetic Moment 33%
• Doped SnO2 33%
• Transition Metal Dopants 33%
• Particle Induced X-ray Emission 33%
• Curie Temperature 33%
• Above Room Temperature 33%
• Doped TiO2 33%
• Plasma-assisted Molecular Beam Epitaxy 33%
• Ferromagnetic Materials 33%
• Wet Chemical Synthesis 33%
• Transition Elements 33%
• Oxygen Plasma 33%

Chemistry

• Doping Material 100%
• Ion Beam 100%
• Ambient Reaction Temperature 60%
• Transition Metal 40%
• Rutherford Backscattering Spectroscopy 40%
• Magnetic Transition 40%
• Dioxygen 20%
• Ferromagnetism 20%
• Titanium Dioxide 20%
• Magnetic Moment 20%
• Curie Temperature 20%
• Molecular Beam Epitaxy 20%
• Proton-Induced X-Ray Emission 20%
• Ferromagnetic Material 20%
• Ion Implantation 20%

Material Science

• Doping (Additives) 100%
• Dilute Magnetic Semiconductor 100%
• Transition Metal 40%
• Rutherford Backscattering Spectrometry 40%
• Ferromagnetism 20%
• Titanium Dioxide 20%
• Curie Temperature 20%
• Ion Implantation 20%
• Molecular Beam Epitaxy 20%
• Ferromagnetic Material 20%
• Wet Chemical Synthesis 20%