Radiation Hardening by Process of CBRAM Resistance Switching Cells

Mahesh Ailavajhala, Maria Mitkova

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

Original languageAmerican English
JournalElectrical and Computer Engineering Faculty Publications and Presentations
DOIs
StatePublished - 1 Aug 2016

Keywords

  • chalcogenide glass
  • conductive bridging RAM (CBRAM)
  • nanoionics memory
  • non-volatile-memory (NVM)
  • programmable metallization cell (PMC)
  • radiation effects

EGS Disciplines

  • Electrical and Computer Engineering

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