Radiation Hardening by Process of CBRAM Resistance Switching Cells

Mahesh Ailavajhala; Maria Mitkova

doi:10.1109/TNS.2016.2569076

Radiation Hardening by Process of CBRAM Resistance Switching Cells

Mahesh Ailavajhala
, Maria Mitkova

Electrical Engineering Department

Boise State University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

Original language	American English
Journal	IEEE Transactions on Nuclear Science
DOIs	https://doi.org/10.1109/TNS.2016.2569076
State	Published - 1 Aug 2016

Keywords

chalcogenide glass
conductive bridging RAM (CBRAM)
nanoionics memory
non-volatile-memory (NVM)
programmable metallization cell (PMC)
radiation effects

EGS Disciplines

Electrical and Computer Engineering

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10.1109/TNS.2016.2569076License: Unspecified

http://dx.doi.org/10.1109/TNS.2016.2569076

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@article{4ce13ef9c2fb4aa99ae1e835488d2013,

title = "Radiation Hardening by Process of CBRAM Resistance Switching Cells",

abstract = " Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.",

keywords = "chalcogenide glass, conductive bridging RAM (CBRAM), nanoionics memory, non-volatile-memory (NVM), programmable metallization cell (PMC), radiation effects",

author = "Mahesh Ailavajhala and Maria Mitkova",

year = "2016",

month = aug,

day = "1",

doi = "10.1109/TNS.2016.2569076",

language = "American English",

}

TY - JOUR

T1 - Radiation Hardening by Process of CBRAM Resistance Switching Cells

AU - Ailavajhala, Mahesh

AU - Mitkova, Maria

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

AB - Non-volatile memory (NVM) technology highly resistant to ionizing dose and radiation effects in general continues to be a challenge for space missions. Novel NVM nano-ionic technologies known as conductive bridging random access memory (CBRAM), a resistive circuit technology, exhibits great promise for both high density memory and high total ionizing dose resilience. In this work, it is discovered that CBRAM can be sensitive to high TID levels. However, this novel technology can be radiation-hardened by process, which is demonstrated in this paper.

KW - chalcogenide glass

KW - conductive bridging RAM (CBRAM)

KW - nanoionics memory

KW - non-volatile-memory (NVM)

KW - programmable metallization cell (PMC)

KW - radiation effects

UR - https://scholarworks.boisestate.edu/electrical_facpubs/341

UR - http://dx.doi.org/10.1109/TNS.2016.2569076

U2 - 10.1109/TNS.2016.2569076

DO - 10.1109/TNS.2016.2569076

M3 - Article

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

ER -

Radiation Hardening by Process of CBRAM Resistance Switching Cells

Abstract

Keywords

EGS Disciplines

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