Raman monitoring of organic semiconductor heterostructure formation

T. U. Kampen; D. A. Tenne; S. Park; G. Salvan; R. Scholz; D. R.T. Zahn

doi:10.1002/(sici)1521-3951(199909)215:1<431::aid-pssb431>3.0.co;2-%23

Raman monitoring of organic semiconductor heterostructure formation

T. U. Kampen, D. A. Tenne, S. Park, G. Salvan, R. Scholz, D. R.T. Zahn

Physics Department

Chemnitz University of Technology

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The growth of perylene-3,4,9,10-tetracarboxylic dianhydrid (PTCDA) was monitored by Raman spectroscopy. Organic molecular beam deposition (OMBD) was used to evaporate PTCDA on hydrogen-passivated Si(111) and selenium-passivated GaAs(100) surfaces. The frequency positions and intensities of the most pronounced Raman lines are analyzed on the basis of density functional tight-binding calculations (DFTB). Spectra were also taken from PTCDA single crystals and used to determine the structural quality of the PTCDA films.

Original language	English
Pages (from-to)	431-434
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	215
Issue number	1
DOIs	https://doi.org/10.1002/(sici)1521-3951(199909)215:1<431::aid-pssb431>3.0.co;2-%23
State	Published - Sep 1999

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title = "Raman monitoring of organic semiconductor heterostructure formation",

abstract = "The growth of perylene-3,4,9,10-tetracarboxylic dianhydrid (PTCDA) was monitored by Raman spectroscopy. Organic molecular beam deposition (OMBD) was used to evaporate PTCDA on hydrogen-passivated Si(111) and selenium-passivated GaAs(100) surfaces. The frequency positions and intensities of the most pronounced Raman lines are analyzed on the basis of density functional tight-binding calculations (DFTB). Spectra were also taken from PTCDA single crystals and used to determine the structural quality of the PTCDA films.",

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T1 - Raman monitoring of organic semiconductor heterostructure formation

AU - Kampen, T. U.

AU - Tenne, D. A.

AU - Park, S.

AU - Salvan, G.

AU - Scholz, R.

AU - Zahn, D. R.T.

PY - 1999/9

Y1 - 1999/9

N2 - The growth of perylene-3,4,9,10-tetracarboxylic dianhydrid (PTCDA) was monitored by Raman spectroscopy. Organic molecular beam deposition (OMBD) was used to evaporate PTCDA on hydrogen-passivated Si(111) and selenium-passivated GaAs(100) surfaces. The frequency positions and intensities of the most pronounced Raman lines are analyzed on the basis of density functional tight-binding calculations (DFTB). Spectra were also taken from PTCDA single crystals and used to determine the structural quality of the PTCDA films.

AB - The growth of perylene-3,4,9,10-tetracarboxylic dianhydrid (PTCDA) was monitored by Raman spectroscopy. Organic molecular beam deposition (OMBD) was used to evaporate PTCDA on hydrogen-passivated Si(111) and selenium-passivated GaAs(100) surfaces. The frequency positions and intensities of the most pronounced Raman lines are analyzed on the basis of density functional tight-binding calculations (DFTB). Spectra were also taken from PTCDA single crystals and used to determine the structural quality of the PTCDA films.

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DO - 10.1002/(sici)1521-3951(199909)215:1<431::aid-pssb431>3.0.co;2-%23

M3 - Article

AN - SCOPUS:0033242198

SN - 0370-1972

VL - 215

SP - 431

EP - 434

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

Raman monitoring of organic semiconductor heterostructure formation

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