TY - JOUR
T1 - Raman study of interface phonons in InAs quantum dot structures
AU - Milekhin, Alexander G.
AU - Tenne, Dmitri A.
AU - Toropov, Alexander I.
AU - Bakarov, Alexander K.
AU - Schulze, Steffen
AU - Zahn, Dietrich R.T.
PY - 2004
Y1 - 2004
N2 - We present the first experimental study of interface phonons in InAs/Al(Ga)As periodical structures with InAs quantum dots by means of Raman spectroscopy. Experiments on asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. Interface phonon modes were also observed in quantum dot structures in which InAs QDs were embedded in an AlGaAs matrix. The IF phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model.
AB - We present the first experimental study of interface phonons in InAs/Al(Ga)As periodical structures with InAs quantum dots by means of Raman spectroscopy. Experiments on asymmetric GaAs/InAs/AlAs quantum dot structures allowed us to investigate the interface phonons localized in the vicinity of corrugated dot/matrix interface and planar interface between the matrix and wetting layer. Interface phonon modes were also observed in quantum dot structures in which InAs QDs were embedded in an AlGaAs matrix. The IF phonon frequencies in the quantum dot structures determined from the experiment are compared to those calculated in the framework of the dielectric continuum model.
UR - https://www.scopus.com/pages/publications/11044221703
U2 - 10.1002/pssc.200405271
DO - 10.1002/pssc.200405271
M3 - Article
AN - SCOPUS:11044221703
SN - 1862-6351
VL - 1
SP - 2629
EP - 2633
JO - Physica Status Solidi C: Current Topics in Solid State Physics
JF - Physica Status Solidi C: Current Topics in Solid State Physics
IS - 11
ER -