Reconfigurable memristive device technologies

Arthur H. Edwards, Hugh J. Barnaby, Kristy A. Campbell, Michael N. Kozicki, Wei Liu, Matthew J. Marinella

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

Original languageEnglish
Article number7128486
Pages (from-to)1004-1033
Number of pages30
JournalProceedings of the IEEE
Volume103
Issue number7
DOIs
StatePublished - 1 Jul 2015

Keywords

  • 3-D integration
  • Memristor
  • ReRAM
  • radiation effects

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