TY - JOUR
T1 - Reconfigurable memristive device technologies
AU - Edwards, Arthur H.
AU - Barnaby, Hugh J.
AU - Campbell, Kristy A.
AU - Kozicki, Michael N.
AU - Liu, Wei
AU - Marinella, Matthew J.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/1
Y1 - 2015/7/1
N2 - In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.
AB - In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.
KW - 3-D integration
KW - Memristor
KW - ReRAM
KW - radiation effects
UR - http://www.scopus.com/inward/record.url?scp=84933575054&partnerID=8YFLogxK
U2 - 10.1109/JPROC.2015.2441752
DO - 10.1109/JPROC.2015.2441752
M3 - Article
AN - SCOPUS:84933575054
SN - 0018-9219
VL - 103
SP - 1004
EP - 1033
JO - Proceedings of the IEEE
JF - Proceedings of the IEEE
IS - 7
M1 - 7128486
ER -