TY - GEN
T1 - Reduction of hysteresis in mobility measurements of carbon nanotube transistors by pulsed I-V characterization
AU - Estrada, David
AU - Dutta, Sumit
AU - Liao, Albert
AU - Pop, Eric
PY - 2009/12/11
Y1 - 2009/12/11
N2 - We investigate the effect of pulsed current-voltage (ID-V GS) measurements on the hysteretic behavior of carbon nanotube field-effect transistors (CNTFET) on SiO2, and the subsequent mobility extraction. We find that hysteresis decreases with longer pulse delays and higher ambient temperature, and can be almost entirely eliminated at ∼10 s pulse intervals and ∼180 °C. Moreover, mobility curves extracted in such conditions approach a unified, "true" value for each nanotube, unlike the less reliable conventional methods which rely either on the forward or reverse voltage sweeps.
AB - We investigate the effect of pulsed current-voltage (ID-V GS) measurements on the hysteretic behavior of carbon nanotube field-effect transistors (CNTFET) on SiO2, and the subsequent mobility extraction. We find that hysteresis decreases with longer pulse delays and higher ambient temperature, and can be almost entirely eliminated at ∼10 s pulse intervals and ∼180 °C. Moreover, mobility curves extracted in such conditions approach a unified, "true" value for each nanotube, unlike the less reliable conventional methods which rely either on the forward or reverse voltage sweeps.
UR - http://www.scopus.com/inward/record.url?scp=76549108488&partnerID=8YFLogxK
U2 - 10.1109/DRC.2009.5354903
DO - 10.1109/DRC.2009.5354903
M3 - Conference contribution
AN - SCOPUS:76549108488
SN - 9781424435289
T3 - Device Research Conference - Conference Digest, DRC
SP - 27
EP - 28
BT - 67th Device Research Conference, DRC 2009
T2 - 67th Device Research Conference, DRC 2009
Y2 - 22 June 2009 through 24 June 2009
ER -